RN1105MFV,L3F

Part NumberRN1105MFV,L3F

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS PREBIAS NPN 0.15W VESM

DatasheetRN1101-6MFV

Package / CaseSOT-723

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM

To learn about the specification of RN1105MFV,L3F, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RN1105MFV,L3F with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RN1105MFV,L3F.
We are offering RN1105MFV,L3F for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

RN1105MFV,L3F - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased

Datasheet

RN1101-6MFV

Standard Package

Manufacturer

Toshiba Semiconductor and Storage

Series

Packaging

Cut Tape (CT)

Part Status

Discontinued at Digi-Key

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 5mA

Current - Collector Cutoff (Max)

500nA

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

SOT-723

Supplier Device Package

VESM

All categories