RN1102ACT(TPL3)


RN1102ACT(TPL3)

Part NumberRN1102ACT(TPL3)

Manufacturer

Description

Datasheet

Package / CaseSC-101, SOT-883

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

RN1102ACT(TPL3) - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
Standard Package1
ManufacturerToshiba Semiconductor and Storage
Series-
PackagingCut Tape (CT)
Part StatusObsolete
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)80mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
Power - Max100mW
Mounting TypeSurface Mount
Package / CaseSC-101, SOT-883
Supplier Device PackageCST3

RN1102ACT(TPL3) - Tags

RN1102ACT(TPL3) RN1102ACT(TPL3) PDF RN1102ACT(TPL3) datasheet RN1102ACT(TPL3) specification RN1102ACT(TPL3) image RN1102ACT(TPL3) India Renesas Electronics India RN1102ACT(TPL3) buy RN1102ACT(TPL3) RN1102ACT(TPL3) price RN1102ACT(TPL3) distributor RN1102ACT(TPL3) supplier RN1102ACT(TPL3) wholesales