RJK2009DPM-00#T0

Part NumberRJK2009DPM-00#T0

ManufacturerRenesas Electronics America

DescriptionMOSFET N-CH 200V 40A TO3PFM

DatasheetRJK2009DPM Datasheet

Package / CaseTO-3PFM, SC-93-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 40A (Ta) 60W (Tc) Through Hole TO-3PFM

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RJK2009DPM-00#T0 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

RJK2009DPM Datasheet

Standard Package

Manufacturer

Renesas Electronics America

Series

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

40A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

36mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

Gate Charge (Qg) (Max) @ Vgs

72nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2900pF @ 25V

FET Feature

Power Dissipation (Max)

60W (Tc)

Operating Temperature

Mounting Type

Through Hole

Supplier Device Package

TO-3PFM

Package / Case

TO-3PFM, SC-93-3

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