RJK1003DPN-E0#T2

Part NumberRJK1003DPN-E0#T2

ManufacturerRenesas Electronics America

DescriptionMOSFET N-CH 100V 50A TO220

DatasheetRJK1003DPN-E0#T2

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 50A (Ta) 125W (Tc) Through Hole TO-220AB

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RJK1003DPN-E0#T2 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

RJK1003DPN-E0#T2

Standard Package

Manufacturer

Renesas Electronics America

Series

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

50A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

Gate Charge (Qg) (Max) @ Vgs

59nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4150pF @ 10V

FET Feature

Power Dissipation (Max)

125W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

All categories

RJK1003DPN-E0#T2

Part NumberRJK1003DPN-E0#T2

ManufacturerRenesas Electronics America

DescriptionMOSFET N-CH 100V 50A TO220

DatasheetRJK1003DPN-E0#T2

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 50A (Ta) 125W (Tc) Through Hole TO-220AB

RJK1003DPN-E0#T2 - Product Attributes

RJK1003DPN-E0#T2 - Tags