Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	RGTVX6TS65D
Standard Package	30
Manufacturer	Rohm Semiconductor
Series	-
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	144A
Current - Collector Pulsed (Icm)	320A
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 80A
Power - Max	404W
Switching Energy	2.65mJ (on), 1.8mJ (off)
Input Type	Standard
Gate Charge	171nC
Td (on/off) @ 25°C	45ns/201ns
Test Condition	400V, 80A, 10Ohm, 15V
Reverse Recovery Time (trr)	109ns
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247N

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NGTG25N120FL2WG	ON Semiconductor, IGBT Trench Field Stop 1200V 50A 385W Through Hole TO-247-3,	View
STGP3NC120HD	STMicroelectronics, IGBT 1200V 14A 75W Through Hole TO-220, PowerMESH™	View
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IXBK75N170	IXYS, IGBT 1700V 200A 1040W Through Hole TO-264, BIMOSFET™	View
NGTB25N120FL2WG	ON Semiconductor, IGBT Field Stop 1200V 50A 385W Through Hole TO-247-3,	View
IRGP50B60PDPBF	Infineon Technologies, IGBT NPT 600V 75A 370W Through Hole TO-247AC,	View
RGW00TK65GVC11	Rohm Semiconductor, IGBT Trench Field Stop 650V 45A 89W Through Hole TO-3PFM,	View
IKA10N60TXKSA1	Infineon Technologies, IGBT Trench Field Stop 600V 11.7A 30W Through Hole PG-TO220-3, TrenchStop®	View
NGTB35N60FL2WG	ON Semiconductor, IGBT Trench Field Stop 600V 70A 300W Through Hole TO-247,	View
STGP10NC60KD	STMicroelectronics, IGBT 600V 20A 65W Through Hole TO-220AB, PowerMESH™	View

RGTVX6TS65DGC11

Part NumberRGTVX6TS65DGC11