RF4E080BNTR
RF4E080BNTR
Part Number RF4E080BNTR
Description MOSFET N-CH 30V 8A 8-HUML
Package / Case 8-PowerUDFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 30V 8A (Ta) 2W (Ta) Surface Mount HUML2020L8
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RF4E080BNTR - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet RF4E080BN
Standard Package 1
Manufacturer Rohm Semiconductor
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 17.6mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14.5nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 15V
FET Feature -
Power Dissipation (Max) 2W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package HUML2020L8
Package / Case 8-PowerUDFN
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