RDN080N25FU6

Part NumberRDN080N25FU6

ManufacturerRohm Semiconductor

DescriptionMOSFET N-CH 250V 8A TO220FN

DatasheetRDN080N25

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 250V 8A (Ta) 35W (Tc) Through Hole TO-220FN

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RDN080N25FU6 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

RDN080N25

Standard Package

500

Manufacturer

Rohm Semiconductor

Series

Packaging

Bulk

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

500mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

543pF @ 10V

FET Feature

Power Dissipation (Max)

35W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FN

Package / Case

TO-220-3 Full Pack

All categories