RCJ081N20TL
RCJ081N20TL
Part Number RCJ081N20TL
Description MOSFET N-CH 200V 8A LPT
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Lead Time To be Confirmed
Detailed Description N-Channel 200V 8A (Tc) 1.56W (Ta), 40W (Tc) Surface Mount LPTS (SC-83)
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RCJ081N20TL - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet RCJ081N20
Standard Package 1
Manufacturer Rohm Semiconductor
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 770mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 5.25V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 25V
FET Feature -
Power Dissipation (Max) 1.56W (Ta), 40W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package LPTS (SC-83)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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