RCD051N20TL

Part NumberRCD051N20TL

ManufacturerRohm Semiconductor

DescriptionMOSFET N-CH 200V 5A CPT3

DatasheetRCD051N20

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 5A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3

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RCD051N20TL - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

RCD051N20

Standard Package

2500

Manufacturer

Rohm Semiconductor

Series

Packaging

Tape & Reel (TR)

Part Status

Not For New Designs

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

760mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id

5.25V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

8.3nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

330pF @ 25V

FET Feature

Power Dissipation (Max)

850mW (Ta), 20W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

CPT3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

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