R6018ANJTL

Part NumberR6018ANJTL

ManufacturerRohm Semiconductor

DescriptionMOSFET N-CH 10V DRIVE LPTS

DatasheetR6018ANJ

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 18A (Ta) 100W (Tc) Surface Mount LPTS

To learn about the specification of R6018ANJTL, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add R6018ANJTL with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of R6018ANJTL.
We are offering R6018ANJTL for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

R6018ANJTL - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

R6018ANJ

Standard Package

1000

Manufacturer

Rohm Semiconductor

Series

Packaging

Tape & Reel (TR)

Part Status

Not For New Designs

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

18A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

270mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2050pF @ 25V

FET Feature

Power Dissipation (Max)

100W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LPTS

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

All categories