R6012ANX

Part NumberR6012ANX

ManufacturerRohm Semiconductor

DescriptionMOSFET N-CH 600V 12A TO-220FM

DatasheetR6012ANX

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 12A (Ta) 50W (Tc) Through Hole TO-220FM

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R6012ANX - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

R6012ANX

Standard Package

500

Manufacturer

Rohm Semiconductor

Series

Packaging

Bulk

Part Status

Not For New Designs

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

12A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

420mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

FET Feature

Power Dissipation (Max)

50W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FM

Package / Case

TO-220-3 Full Pack

All categories

R6012ANX

Part NumberR6012ANX

ManufacturerRohm Semiconductor

DescriptionMOSFET N-CH 600V 12A TO-220FM

DatasheetR6012ANX

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 12A (Ta) 50W (Tc) Through Hole TO-220FM

R6012ANX - Product Attributes

R6012ANX - Tags