R6011KNX
R6011KNX
Part Number R6011KNX Description MOSFET N-CH 600V 11A TO220FM Package / Case TO-220-3 Full PackUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 11A (Tc) 53W (Tc) Through Hole TO-220FM
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R6011KNX - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet R6011KNX Standard Package 100 Manufacturer Rohm Semiconductor Series - Packaging Bulk Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 390mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 740pF @ 25V FET Feature - Power Dissipation (Max) 53W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FM Package / Case TO-220-3 Full Pack
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