R6009JNJGTL
R6009JNJGTL
Part Number R6009JNJGTL Description R6009JNJ IS A POWER MOSFET WITH Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 9A (Tc) 125W (Tc) Surface Mount LPTS (D2PAK)
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R6009JNJGTL - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet R6009JNJ Standard Package 1 Manufacturer Rohm Semiconductor Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 15V Rds On (Max) @ Id, Vgs 585mOhm @ 4.5A, 15V Vgs(th) (Max) @ Id 7V @ 1.38mA Gate Charge (Qg) (Max) @ Vgs 22nC @ 15V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 645pF @ 100V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package LPTS (D2PAK) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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