R6009JNJGTL
R6009JNJGTL
Part Number R6009JNJGTL
Description R6009JNJ IS A POWER MOSFET WITH
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Lead Time To be Confirmed
Detailed Description N-Channel 600V 9A (Tc) 125W (Tc) Surface Mount LPTS (D2PAK)
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R6009JNJGTL - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet R6009JNJ
Standard Package 1
Manufacturer Rohm Semiconductor
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 585mOhm @ 4.5A, 15V
Vgs(th) (Max) @ Id 7V @ 1.38mA
Gate Charge (Qg) (Max) @ Vgs 22nC @ 15V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 645pF @ 100V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package LPTS (D2PAK)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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