R6009JND3TL1
R6009JND3TL1
Part Number R6009JND3TL1 Description R6009JND3 IS A POWER MOSFET WITH Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 9A (Tc) 125W (Tc) Surface Mount TO-252
To learn about the specification of R6009JND3TL1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add R6009JND3TL1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of R6009JND3TL1.
We are offering R6009JND3TL1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
R6009JND3TL1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet R6009JND3 Standard Package 1 Manufacturer Rohm Semiconductor Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 15V Rds On (Max) @ Id, Vgs 585mOhm @ 4.5A, 15V Vgs(th) (Max) @ Id 7V @ 1.38mA Gate Charge (Qg) (Max) @ Vgs 22nC @ 15V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 645pF @ 100V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
R6009JND3TL1 - Related ProductsMore >>
SI3458BDV-T1-E3 Vishay Siliconix, N-Channel 60V 4.1A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP, TrenchFET®
View
CMLDM7120G TR Central Semiconductor Corp, N-Channel 20V 1A (Ta) 150mW (Ta) Surface Mount SOT-563,
View
SIR812DP-T1-GE3 Vishay Siliconix, N-Channel 30V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
IRFB3607PBF Infineon Technologies, N-Channel 75V 80A (Tc) 140W (Tc) Through Hole TO-220AB, HEXFET®
View
R6004JNJGTL Rohm Semiconductor, N-Channel 600V 4A (Tc) 60W (Tc) Surface Mount LPTS (D2PAK),
View
IRL60S216 Infineon Technologies, N-Channel 60V 195A (Tc) 375W (Tc) Surface Mount D2PAK, HEXFET®, StrongIRFET™
View
CPH3457-TL-W ON Semiconductor, N-Channel 30V 3A (Ta) 1W (Ta) Surface Mount 3-CPH,
View
TN2106K1-G Microchip Technology, N-Channel 60V 280mA (Tj) 360mW (Tc) Surface Mount TO-236AB (SOT23),
View
TN0702N3-G Microchip Technology, N-Channel 20V 530mA (Tj) 1W (Tc) Through Hole TO-92-3,
View
STFW40N60M2 STMicroelectronics, N-Channel 600V 34A (Tc) 63W (Tc) Through Hole ISOWATT-218FX, MDmesh™ II Plus
View
DMN3900UFA-7B Diodes Incorporated, N-Channel 30V 550mA (Ta) 390mW (Ta) Surface Mount X2-DFN0806-3,
View
PSMN5R0-30YL,115 Nexperia USA Inc., N-Channel 30V 91A (Tc) 61W (Tc) Surface Mount LFPAK56, Power-SO8,
View
R6009JND3TL1 - Tags
English
