R6007JNJGTL
R6007JNJGTL
Part Number R6007JNJGTL
Description R6007JNJ IS A POWER MOSFET WITH
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 600V 7A (Tc) 96W (Tc) Surface Mount LPTS (D2PAK)
To learn about the specification of R6007JNJGTL, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add R6007JNJGTL with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of R6007JNJGTL.
We are offering R6007JNJGTL for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
R6007JNJGTL - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet R6007JNJ
Standard Package 1
Manufacturer Rohm Semiconductor
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 780mOhm @ 3.5A, 15V
Vgs(th) (Max) @ Id 7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 17.5nC @ 15V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 475pF @ 100V
FET Feature -
Power Dissipation (Max) 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package LPTS (D2PAK)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
R6007JNJGTL - Related ProductsMore >>
FDP2710
ON Semiconductor, N-Channel 250V 50A (Tc) 260W (Tc) Through Hole TO-220-3, PowerTrench®
View
IRFS4410ZTRLPBF
Infineon Technologies, N-Channel 100V 97A (Tc) 230W (Tc) Surface Mount D2PAK, HEXFET®
View
IPB049NE7N3GATMA1
Infineon Technologies, N-Channel 75V 80A (Tc) 150W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
View
FCA22N60N
ON Semiconductor, N-Channel 600V 22A (Tc) 205W (Tc) Through Hole TO-3PN, SupreMOS™
View
R6030JNZ4C13
Rohm Semiconductor, N-Channel 600V 30A (Tc) 370W (Tc) Through Hole TO-247G,
View
VS-FB190SA10
Vishay Semiconductor Diodes Division, N-Channel 100V 190A 568W (Tc) Chassis Mount SOT-227,
View
DMTH4007LK3-13
Diodes Incorporated, N-Channel 40V 16.8A (Ta), 70A (Tc) 2.6W (Ta) Surface Mount TO-252,
View
BSS123-TP
Micro Commercial Co, N-Channel 100V 170mA 350mW Surface Mount SOT-23,
View
RCJ050N25TL
Rohm Semiconductor, N-Channel 250V 5A (Tc) 1.56W (Ta), 30W (Tc) Surface Mount LPTS (SC-83),
View
IRFB3207ZGPBF
Infineon Technologies, N-Channel 75V 120A (Tc) 300W (Tc) Through Hole TO-220AB, HEXFET®
View
IRFH8337TRPBF
Infineon Technologies, N-Channel 30V 12A (Ta), 35A (Tc) 3.2W (Ta), 27W (Tc) Surface Mount PQFN (5x6), HEXFET®
View
APT50M65JLL
Microsemi Corporation, N-Channel 500V 58A (Tc) 520W (Tc) Chassis Mount ISOTOP®, POWER MOS 7®
View
R6007JNJGTL - Tags