QS8J4TR
QS8J4TR
Part Number QS8J4TR
Description MOSFET 2P-CH 30V 4A TSMT8
Package / Case 8-SMD, Flat Lead
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Lead Time To be Confirmed
Detailed Description Mosfet Array 2 P-Channel (Dual) 30V 4A 550mW Surface Mount TSMT8
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QS8J4TR - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet QS8J4
Standard Package 1
Manufacturer Rohm Semiconductor
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 4A
Rds On (Max) @ Id, Vgs 56mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 10V
Power - Max 550mW
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Supplier Device Package TSMT8
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Infineon Technologies, Mosfet Array 2 P-Channel (Dual) 30V 9.2A 2W Surface Mount 8-SO, HEXFET®
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CMKDM8005 TR
Central Semiconductor Corp, Mosfet Array 2 P-Channel (Dual) 20V 650mA 350mW Surface Mount SOT-363,
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SH8J66TB1
Rohm Semiconductor, Mosfet Array 2 P-Channel (Dual) 30V 9A 2W Surface Mount 8-SOP,
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QS8J4TR - Tags