PSMN4R3-100ES,127
PSMN4R3-100ES,127
Part Number PSMN4R3-100ES,127 Description MOSFET N-CH 100V 120A I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 120A (Tc) 338W (Tc) Through Hole I2PAK
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PSMN4R3-100ES,127 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet PSMN4R3-100ES Standard Package 50 Manufacturer Nexperia USA Inc. Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.3mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9900pF @ 50V FET Feature - Power Dissipation (Max) 338W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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