PSMN102-200Y,115

Part NumberPSMN102-200Y,115

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	PSMN102-200Y
Standard Package	1
Manufacturer	Nexperia USA Inc.
Series	TrenchMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	21.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	102mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	30.7nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1568pF @ 30V
FET Feature	-
Power Dissipation (Max)	113W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LFPAK56, Power-SO8
Package / Case	SC-100, SOT-669

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