PSMN018-100ESFQ

Part NumberPSMN018-100ESFQ

ManufacturerNexperia USA Inc.

DescriptionMOSFET N-CHANNEL 100V 53A I2PAK

DatasheetPSMN018-100ESF

Package / CaseTO-220-3, Short Tab

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 53A (Ta) 111W (Ta) Through Hole I2PAK

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PSMN018-100ESFQ - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

PSMN018-100ESF

Standard Package

Manufacturer

Nexperia USA Inc.

Series

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

53A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

7V, 10V

Rds On (Max) @ Id, Vgs

18mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

21.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1482pF @ 50V

FET Feature

Power Dissipation (Max)

111W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK

Package / Case

TO-220-3, Short Tab

All categories