PMV32UP/MIR

Part NumberPMV32UP/MIR

ManufacturerNexperia USA Inc.

DescriptionSMALL SIGNAL MOSFET

DatasheetDiscrete Semi Prod. Guide

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 4A (Ta) 510mW (Ta), 4.15W (Tc) Surface Mount TO-236AB

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PMV32UP/MIR - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

Discrete Semi Prod. Guide

Standard Package

Manufacturer

Nexperia USA Inc.

Series

Part Status

Obsolete

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

36mOhm @ 2.4A, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15.5nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1890pF @ 10V

FET Feature

Power Dissipation (Max)

510mW (Ta), 4.15W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB

Package / Case

TO-236-3, SC-59, SOT-23-3

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