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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet PMCXB1000UE
Standard Package 1
Manufacturer Nexperia USA Inc.
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N and P-Channel Complementary
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 590mA (Ta), 410mA (Ta)
Rds On (Max) @ Id, Vgs 670mOhm @ 590mA, 4.5V, 1.4Ohm @ 410mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.05nC @ 4.5V, 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 30.3pF @ 15V, 43.2pF @ 15V
Power - Max 285mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-XFDFN Exposed Pad
Supplier Device Package DFN1010B-6
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CSD87503Q3ET
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Rohm Semiconductor, Mosfet Array 2 N-Channel (Dual) 60V 4.5A (Ta) 2W Surface Mount 8-SOP, Automotive, AEC-Q101
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CSD88584Q5DC
Texas Instruments, Mosfet Array 2 N-Channel (Half Bridge) 40V 12W Surface Mount 22-VSON-CLIP (5x6), NexFET™
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SQJB70EP-T1_GE3
Vishay Siliconix, Mosfet Array 2 N-Channel (Dual) 100V 11.3A (Tc) 27W (Tc) Surface Mount PowerPAK® SO-8 Dual, Automotive, AEC-Q101, TrenchFET®
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