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PHT6NQ10T,135

PHT6NQ10T,135

Part NumberPHT6NQ10T,135

ManufacturerNexperia USA Inc.

DescriptionMOSFET N-CH 100V 3A SOT223

DatasheetPHT6NQ10T

Package / CaseTO-261-4, TO-261AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 3A (Ta) 1.8W (Ta), 8.3W (Tc) Surface Mount SC-73

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PHT6NQ10T,135 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	PHT6NQ10T
Standard Package	1
Manufacturer	Nexperia USA Inc.
Series	TrenchMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	90mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	21nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	633pF @ 25V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta), 8.3W (Tc)
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-73
Package / Case	TO-261-4, TO-261AA

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