PHT6N06T,135

Part NumberPHT6N06T,135

ManufacturerNXP USA Inc.

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Standard Package	1
Manufacturer	NXP USA Inc.
Series	TrenchMOS™
Packaging	Cut Tape (CT)
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25°C	5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	150mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	5.6nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	175pF @ 25V
FET Feature	-
Power Dissipation (Max)	8.3W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223
Package / Case	TO-261-4, TO-261AA