PHT2NQ10T,135

Part NumberPHT2NQ10T,135

ManufacturerNXP USA Inc.

DescriptionMOSFET N-CH 100V 2.5A SOT223

DatasheetPHT2NQ10T

Package / CaseTO-261-4, TO-261AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 2.5A (Tc) 6.25W (Tc) Surface Mount SOT-223

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PHT2NQ10T,135 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

PHT2NQ10T

Standard Package

4000

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

430mOhm @ 1.75A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

5.1nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

160pF @ 25V

FET Feature

Power Dissipation (Max)

6.25W (Tc)

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

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