PHM30NQ10T,518

Part NumberPHM30NQ10T,518

ManufacturerNXP USA Inc.

DescriptionMOSFET N-CH 100V 37.6A 8HVSON

DatasheetPHM30NQ10T

Package / Case8-VDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 37.6A (Tc) 62.5W (Tc) Surface Mount 8-HVSON (6x5)

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PHM30NQ10T,518 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

PHM30NQ10T

Standard Package

2500

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

37.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

20mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

53.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3600pF @ 25V

FET Feature

Power Dissipation (Max)

62.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-HVSON (6x5)

Package / Case

8-VDFN Exposed Pad

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