PH1955L,115

Part NumberPH1955L,115

ManufacturerNXP USA Inc.

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Standard Package	1
Manufacturer	NXP USA Inc.
Series	TrenchMOS™
Packaging	Cut Tape (CT)
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	17.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	18nC @ 5V
Vgs (Max)	±15V
Input Capacitance (Ciss) (Max) @ Vds	1992pF @ 25V
FET Feature	-
Power Dissipation (Max)	75W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LFPAK56, Power-SO8
Package / Case	SC-100, SOT-669