PDTC123EEF,115


PDTC123EEF,115

Part NumberPDTC123EEF,115

Manufacturer

Description

Datasheet

Package / CaseSC-89, SOT-490

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

PDTC123EEF,115 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
Standard Package1
ManufacturerNXP USA Inc.
Series-
PackagingCut Tape (CT)
Part StatusObsolete
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)1µA
Power - Max250mW
Mounting TypeSurface Mount
Package / CaseSC-89, SOT-490
Supplier Device PackageSC-89
Base Part NumberPDTC123

PDTC123EEF,115 - Tags

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