PDTC115ET,215
PDTC115ET,215
Part Number PDTC115ET,215
Description TRANS PREBIAS NPN 250MW TO236AB
Package / Case TO-236-3, SC-59, SOT-23-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 20mA 250mW Surface Mount TO-236AB
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PDTC115ET,215 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet PDTC115E Series
Standard Package 1
Manufacturer Nexperia USA Inc.
Series -
Packaging Cut Tape (CT)
Part Status Active
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 20mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 100 kOhms
Resistor - Emitter Base (R2) 100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 1µA
Power - Max 250mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB
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