PDTB123ES,126

Part NumberPDTB123ES,126

ManufacturerNXP USA Inc.

DescriptionTRANS PREBIAS PNP 500MW TO92-3

DatasheetPDTB123E Series

Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 500mW Through Hole TO-92-3

To learn about the specification of PDTB123ES,126, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add PDTB123ES,126 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of PDTB123ES,126.
We are offering PDTB123ES,126 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

PDTB123ES,126 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased

Datasheet

PDTB123E Series

Standard Package

2000

Manufacturer

NXP USA Inc.

Series

Packaging

Tape & Box (TB)

Part Status

Obsolete

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

2.2 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 50mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max)

500nA

Power - Max

500mW

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

Base Part Number

PDTB123

All categories