PDTB113EQAZ


PDTB113EQAZ

Part NumberPDTB113EQAZ

Manufacturer

Description

Datasheet

Package / Case3-XDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

PDTB113EQAZ - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
Standard Package5000
ManufacturerNexperia USA Inc.
SeriesAutomotive, AEC-Q101
PackagingTape & Reel (TR)
Part StatusActive
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)1 kOhms
Resistor - Emitter Base (R2)1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition150MHz
Power - Max325mW
Mounting TypeSurface Mount
Package / Case3-XDFN Exposed Pad
Supplier Device PackageDFN1010D-3

PDTB113EQAZ - Tags

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