PDTA123EMB,315


PDTA123EMB,315

Part NumberPDTA123EMB,315

Manufacturer

Description

Package / Case3-XFDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

PDTA123EMB,315 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Standard Package10000
ManufacturerNexperia USA Inc.
Series-
PackagingTape & Reel (TR)
Part StatusActive
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)1µA
Frequency - Transition180MHz
Power - Max250mW
Mounting TypeSurface Mount
Package / Case3-XFDFN
Supplier Device PackageDFN1006B-3
Base Part NumberPDTA123

PDTA123EMB,315 - Tags

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