PDTA115ES,126

Part NumberPDTA115ES,126

ManufacturerNXP USA Inc.

DescriptionTRANS PREBIAS PNP 500MW TO92-3

DatasheetPDTA115E

Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 20mA 500mW Through Hole TO-92-3

To learn about the specification of PDTA115ES,126, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add PDTA115ES,126 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of PDTA115ES,126.
We are offering PDTA115ES,126 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

PDTA115ES,126 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased

Datasheet

PDTA115E

Standard Package

2000

Manufacturer

NXP USA Inc.

Series

Packaging

Tape & Box (TB)

Part Status

Obsolete

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

20mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

100 kOhms

Resistor - Emitter Base (R2)

100 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

150mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

1µA

Power - Max

500mW

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

Base Part Number

PDTA115

All categories