PDTA114YS,126

Part NumberPDTA114YS,126

ManufacturerNXP USA Inc.

To learn about the specification of PDTA114YS,126, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add PDTA114YS,126 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of PDTA114YS,126.
We are offering PDTA114YS,126 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Standard Package	2000
Manufacturer	NXP USA Inc.
Series	-
Packaging	Tape & Box (TB)
Part Status	Obsolete
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	10 kOhms
Resistor - Emitter Base (R2)	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic	100mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	1µA
Power - Max	500mW
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package	TO-92-3
Base Part Number	PDTA114