PBRN113ES,126


PBRN113ES,126

Part NumberPBRN113ES,126

Manufacturer

Description

Datasheet

Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

PBRN113ES,126 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
Standard Package2000
ManufacturerNXP USA Inc.
Series-
PackagingTape & Box (TB)
Part StatusObsolete
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)800mA
Voltage - Collector Emitter Breakdown (Max)40V
Resistor - Base (R1)1 kOhms
Resistor - Emitter Base (R2)1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max)500nA
Power - Max700mW
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device PackageTO-92-3
Base Part NumberPBRN113

PBRN113ES,126 - Tags

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