PBLS2002S,115


PBLS2002S,115

Part NumberPBLS2002S,115

Manufacturer

Description

Datasheet

Package / Case8-SOIC (0.154", 3.90mm Width)

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Lead TimeTo be Confirmed

Detailed Description

PBLS2002S,115 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
Standard Package1
ManufacturerNXP USA Inc.
Series-
PackagingCut Tape (CT)
Part StatusObsolete
Transistor Type1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max)100mA, 3A
Voltage - Collector Emitter Breakdown (Max)50V, 20V
Resistor - Base (R1)4.7kOhms
Resistor - Emitter Base (R2)4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 10mA, 5V / 150 @ 2A, 2V
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 10mA / 355mV @ 300mA, 3A
Current - Collector Cutoff (Max)1µA, 100nA
Frequency - Transition100MHz
Power - Max1.5W
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO
Base Part NumberPBLS2002

PBLS2002S,115 - Tags

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