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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet NX2301P
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 120mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 6V
FET Feature -
Power Dissipation (Max) 400mW (Ta), 2.8W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3
SQM40P10-40L_GE3
Vishay Siliconix, P-Channel 100V 40A (Tc) 150W (Tc) Surface Mount TO-263 (D²Pak), Automotive, AEC-Q101, TrenchFET®
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DMPH6050SK3Q-13
Diodes Incorporated, P-Channel 60V 7.2A (Ta), 23.6A (Tc) 1.9W (Ta) Surface Mount TO-252,
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CPH3362-TL-W
ON Semiconductor, P-Channel 100V 700mA (Ta) 1W (Ta) Surface Mount 3-CPH,
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DMG2305UX-13
Diodes Incorporated, P-Channel 20V 4.2A (Ta) 1.4W (Ta) Surface Mount SOT-23,
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ZXMP10A17E6TA
Diodes Incorporated, P-Channel 100V 1.3A (Ta) 1.1W (Ta) Surface Mount SOT-26,
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RSC002P03T316
Rohm Semiconductor, P-Channel 30V 250mA (Ta) 200mW (Ta) Surface Mount SST3,
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IXTQ52P10P
IXYS, P-Channel 100V 52A (Tc) 300W (Tc) Through Hole TO-3P, PolarP™
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SSM6J207FE,LF
Toshiba Semiconductor and Storage, P-Channel 30V 1.4A (Ta) 500mW (Ta) Surface Mount ES6 (1.6x1.6), U-MOSII
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STD26P3LLH6
STMicroelectronics, P-Channel 30V 12A (Tc) 40W (Tc) Surface Mount DPAK, DeepGATE™, STripFET™ VI
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FDC638APZ
ON Semiconductor, P-Channel 20V 4.5A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®
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TSM160P04LCRHRLG
Taiwan Semiconductor Corporation, P-Channel 40V 51A (Tc) 69W (Tc) Surface Mount 8-PDFN (5x6), Automotive, AEC-Q101
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SI2371EDS-T1-GE3
Vishay Siliconix, P-Channel 30V 4.8A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23, TrenchFET®
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