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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet NX2301P
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 120mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 6V
FET Feature -
Power Dissipation (Max) 400mW (Ta), 2.8W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3
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AON6403
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SIUD401ED-T1-GE3
Vishay Siliconix, P-Channel 30V 500mA (Ta) 1.25W (Ta) Surface Mount PowerPAK® 0806, TrenchFET® Gen III
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Diodes Incorporated, P-Channel 30V 1.1A (Ta) 625mW (Ta) Surface Mount SOT-23-3,
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NDT452AP
ON Semiconductor, P-Channel 30V 5A (Ta) 3W (Ta) Surface Mount SOT-223-4,
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FQD4P40TM
ON Semiconductor, P-Channel 400V 2.7A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount D-Pak, QFET®
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