NVD5867NLT4G-TB01

Part NumberNVD5867NLT4G-TB01

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 60V 22A DPAK DPAK

DatasheetNVD5867NL

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 6A (Ta), 22A (Tc) 3.3W (Ta), 43W (Tc) Surface Mount DPAK-3

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NVD5867NLT4G-TB01 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

NVD5867NL

Standard Package

2500

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

6A (Ta), 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

39mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

675pF @ 25V

FET Feature

Power Dissipation (Max)

3.3W (Ta), 43W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

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