NVD4856NT4G

Part NumberNVD4856NT4G

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 25V 89A DPAK

DatasheetNTD4856N,NVD4856N

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 25V 13.3A (Ta), 89A (Tc) 1.33W (Ta), 60W (Tc) Surface Mount DPAK

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NVD4856NT4G - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

NTD4856N,NVD4856N

Standard Package

2500

Manufacturer

ON Semiconductor

Series

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

13.3A (Ta), 89A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.7mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2241pF @ 12V

FET Feature

Power Dissipation (Max)

1.33W (Ta), 60W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

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