NVD4810NT4G-TB01

Part NumberNVD4810NT4G-TB01

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 30V 54A DPAK

DatasheetNTD4810N, NVD4810N

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 9A (Ta), 54A (Tc) 1.4W (Ta), 50W (Tc) Surface Mount DPAK-3

To learn about the specification of NVD4810NT4G-TB01, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add NVD4810NT4G-TB01 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of NVD4810NT4G-TB01.
We are offering NVD4810NT4G-TB01 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

NVD4810NT4G-TB01 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

NTD4810N, NVD4810N

Standard Package

2500

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9A (Ta), 54A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

21nC @ 11.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1350pF @ 12V

FET Feature

Power Dissipation (Max)

1.4W (Ta), 50W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

All categories