NVB6412ANT4G

Part NumberNVB6412ANT4G

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 100V 59A D2PAK

DatasheetNTB,NTP6412AN

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 58A (Tc) 167W (Tc) Surface Mount D2PAK-3

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NVB6412ANT4G - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

NTB,NTP6412AN

Standard Package

800

Manufacturer

ON Semiconductor

Series

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

58A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

18.2mOhm @ 58A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3500pF @ 25V

FET Feature

Power Dissipation (Max)

167W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK-3

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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