NVB25P06T4G

Part NumberNVB25P06T4G

ManufacturerON Semiconductor

DescriptionMOSFET P-CH 60V 27.5A D2PAK

DatasheetN(T,V)B25P06

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 27.5A (Ta) 120W (Tj) Surface Mount D2PAK

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NVB25P06T4G - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

N(T,V)B25P06

Standard Package

Manufacturer

ON Semiconductor

Series

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

27.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

82mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 10V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

1680pF @ 25V

FET Feature

Power Dissipation (Max)

120W (Tj)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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