NTP8G202NG

Part NumberNTP8G202NG

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 600V 9A TO220

DatasheetNTP8G202N

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 9A (Tc) 65W (Tc) Through Hole TO-220-3

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NTP8G202NG - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

NTP8G202N

Standard Package

Manufacturer

ON Semiconductor

Series

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

Rds On (Max) @ Id, Vgs

350mOhm @ 5.5A, 8V

Vgs(th) (Max) @ Id

2.6V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

9.3nC @ 4.5V

Vgs (Max)

±18V

Input Capacitance (Ciss) (Max) @ Vds

760pF @ 400V

FET Feature

Power Dissipation (Max)

65W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case