NTMS4807NR2G
NTMS4807NR2G
Part Number NTMS4807NR2G Description MOSFET N-CH 30V 9.1A 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 9.1A (Ta) 860mW (Ta) Surface Mount 8-SOIC
To learn about the specification of NTMS4807NR2G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add NTMS4807NR2G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of NTMS4807NR2G.
We are offering NTMS4807NR2G for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
NTMS4807NR2G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet NTMS4807N Standard Package 1 Manufacturer ON Semiconductor Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 9.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.1mOhm @ 14.8A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 24V FET Feature - Power Dissipation (Max) 860mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width)
NTMS4807NR2G - Related ProductsMore >>
PSMN4R3-100PS,127 Nexperia USA Inc., N-Channel 100V 120A (Tc) 338W (Tc) Through Hole TO-220AB,
View
IXFX52N100X IXYS, N-Channel 1000V 52A (Tc) 1250W (Tc) Through Hole PLUS247™, HiPerFET™
View
IPL65R230C7AUMA1 Infineon Technologies, N-Channel 650V 10A (Tc) 67W (Tc) Surface Mount PG-VSON-4, CoolMOS™ C7
View
IPB033N10N5LFATMA1 Infineon Technologies, N-Channel 100V 120A (Tc) 179W (Tc) Surface Mount PG-TO263-3, OptiMOS™-5
View
BSZ068N06NSATMA1 Infineon Technologies, N-Channel 60V 40A (Tc) 2.1W (Ta), 46W (Tc) Surface Mount PG-TSDSON-8-FL, OptiMOS™
View
STH260N6F6-6 STMicroelectronics, N-Channel 60V 180A (Tc) 300W (Tc) Surface Mount H2PAK-6, DeepGATE™, STripFET™ VI
View
DMN3032LE-13 Diodes Incorporated, N-Channel 30V 5.6A (Ta) 1.8W (Ta) Surface Mount SOT-223,
View
ZXMN6A08GTA Diodes Incorporated, N-Channel 60V 3.8A (Ta) 2W (Ta) Surface Mount SOT-223,
View
CSD19534Q5AT Texas Instruments, N-Channel 100V 50A (Ta) 3.2W (Ta), 63W (Tc) Surface Mount 8-VSONP (5x6), NexFET™
View
IXFK55N50 IXYS, N-Channel 500V 55A (Tc) 625W (Tc) Through Hole TO-264AA (IXFK), HiPerFET™
View
SIE818DF-T1-E3 Vishay Siliconix, N-Channel 75V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L), TrenchFET®
View
STWA48N60M2 STMicroelectronics, N-Channel 600V 42A (Tc) 300W (Tc) Through Hole TO-247 Long Leads, MDmesh™
View
NTMS4807NR2G - Tags
English
