NTLJS1102PTAG

Part NumberNTLJS1102PTAG

ManufacturerON Semiconductor

DescriptionMOSFET P-CH 8V 3.7A 6-WDFN

DatasheetNTLJS1102P

Package / Case6-WDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 8V 3.7A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)

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NTLJS1102PTAG - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

NTLJS1102P

Standard Package

3000

Manufacturer

ON Semiconductor

Series

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

Current - Continuous Drain (Id) @ 25°C

3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

36mOhm @ 6.2A, 4.5V

Vgs(th) (Max) @ Id

720mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 4.5V

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

1585pF @ 4V

FET Feature

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-WDFN (2x2)

Package / Case

6-WDFN Exposed Pad

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