NTHD4P02FT1G
NTHD4P02FT1G
Part Number NTHD4P02FT1G
Description MOSFET P-CH 20V 2.2A CHIPFET
Package / Case 8-SMD, Flat Lead
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Lead Time To be Confirmed
Detailed Description P-Channel 20V 2.2A (Tj) 1.1W (Tj) Surface Mount ChipFET™
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NTHD4P02FT1G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet NTHD4P02F
Standard Package 1
Manufacturer ON Semiconductor
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.2A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 155mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 10V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.1W (Tj)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package ChipFET™
Package / Case 8-SMD, Flat Lead
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