NTGD4169FT1G

Part NumberNTGD4169FT1G

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 30V 2.6A 6-TSOP

DatasheetNTGD4169F

Package / CaseSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 2.6A (Ta) 900mW (Ta) Surface Mount 6-TSOP

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NTGD4169FT1G - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

NTGD4169F

Standard Package

3000

Manufacturer

ON Semiconductor

Series

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

90mOhm @ 2.6A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.5nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

295pF @ 15V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

900mW (Ta)

Operating Temperature

-25°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6

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