NSVMUN5212DW1T1G

Part NumberNSVMUN5212DW1T1G

ManufacturerON Semiconductor

DescriptionTRANS 2NPN PREBIAS 0.25W SOT363

DatasheetMUN5212DW1, NSBC124EDxx

Package / Case6-TSSOP, SC-88, SOT-363

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

To learn about the specification of NSVMUN5212DW1T1G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add NSVMUN5212DW1T1G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of NSVMUN5212DW1T1G.
We are offering NSVMUN5212DW1T1G for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

NSVMUN5212DW1T1G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet	MUN5212DW1, NSBC124EDxx
Standard Package	3000
Manufacturer	ON Semiconductor
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	22kOhms
Resistor - Emitter Base (R2)	22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-
Power - Max	250mW
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SC-88/SC70-6/SOT-363
Base Part Number	MUN52**DW1T

NSVMUN5212DW1T1G - Related Products

More >>

EMH2T2R	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6,	View
RN1902,LF(CT	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6,	View
PEMH11,115	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666,	View
RN1611(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SM6,	View
RN1961(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6,	View
PRMH2Z	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 230MHz 480mW Surface Mount DFN1412-6, Automotive, AEC-Q101	View
EMG11T2R	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT5,	View
UMG5NTR	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT5,	View
SMUN5213DW1T1G	ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363,	View
EMH9T2R	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6,	View
DMC561070R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SMini5-F3-B,	View
RN1964TE85LF	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6,	View

NSVMUN5212DW1T1G - Tags

NSVMUN5212DW1T1G NSVMUN5212DW1T1G PDF NSVMUN5212DW1T1G datasheet NSVMUN5212DW1T1G specification NSVMUN5212DW1T1G image NSVMUN5212DW1T1G India Renesas Electronics India NSVMUN5212DW1T1G buy NSVMUN5212DW1T1G NSVMUN5212DW1T1G price NSVMUN5212DW1T1G distributor NSVMUN5212DW1T1G supplier NSVMUN5212DW1T1G wholesales