NSVMMUN2112LT1G

Part NumberNSVMMUN2112LT1G

ManufacturerON Semiconductor

DescriptionTRANS PREBIAS PNP 0.246W SOT23

DatasheetMUNx112, MMUN2112L, DTA124Exx, NSBA124EF3

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

To learn about the specification of NSVMMUN2112LT1G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add NSVMMUN2112LT1G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of NSVMMUN2112LT1G.
We are offering NSVMMUN2112LT1G for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

NSVMMUN2112LT1G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet	MUNx112, MMUN2112L, DTA124Exx, NSBA124EF3
Standard Package	3000
Manufacturer	ON Semiconductor
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	22 kOhms
Resistor - Emitter Base (R2)	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)	500nA
Power - Max	246mW
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3 (TO-236)

NSVMMUN2112LT1G - Related Products

More >>

RN2301,LF	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount USM,	View
BCR562E6327HTSA1	Infineon Technologies, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 150MHz 330mW Surface Mount SOT-23-3,	View
DTA144EU3T106	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased + Diode 100mA 250MHz 200mW Surface Mount UMT3,	View
DTA015EUBTL	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 20mA 250MHz 200mW Surface Mount UMT3F,	View
DTA143ZM3T5G	ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 260mW Surface Mount SOT-723,	View
DTA124EUBHZGTL	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 100mA 250MHz 200mW Surface Mount UMT3F, Automotive, AEC-Q101	View
DDTA123YUA-7-F	Diodes Incorporated, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SOT-323,	View
DTA043TEBTL	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount EMT3F (SOT-416FL),	View
PDTA143XT,215	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250mW Surface Mount TO-236AB,	View
DTA114TETL	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount EMT3,	View
DTA144GUAT106	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount UMT3,	View
DTA114TMT2L	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VMT3,	View

NSVMMUN2112LT1G - Tags

NSVMMUN2112LT1G NSVMMUN2112LT1G PDF NSVMMUN2112LT1G datasheet NSVMMUN2112LT1G specification NSVMMUN2112LT1G image NSVMMUN2112LT1G India Renesas Electronics India NSVMMUN2112LT1G buy NSVMMUN2112LT1G NSVMMUN2112LT1G price NSVMMUN2112LT1G distributor NSVMMUN2112LT1G supplier NSVMMUN2112LT1G wholesales