NSVDTA123JM3T5G


NSVDTA123JM3T5G

Part NumberNSVDTA123JM3T5G

Manufacturer

Description

Package / CaseSOT-723

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

NSVDTA123JM3T5G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Standard Package8000
ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
Part StatusActive
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Power - Max260mW
Mounting TypeSurface Mount
Package / CaseSOT-723
Supplier Device PackageSOT-723

NSVDTA123JM3T5G - Tags

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